Apparatus and methods for effective impurity gettering

Apparatus and methods for effective impurity gettering are described herein. In some embodiments, a described device includes: a substrate; a pixel region disposed in the substrate; an isolation region disposed in the substrate and within a proximity of the pixel region; and a heterogeneous layer on...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Yueh-Chuan, Huang, Shih-Hsien, Chen, Chia-Chan, Chen, Pu-Fang
Format: Patent
Sprache:eng
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Zusammenfassung:Apparatus and methods for effective impurity gettering are described herein. In some embodiments, a described device includes: a substrate; a pixel region disposed in the substrate; an isolation region disposed in the substrate and within a proximity of the pixel region; and a heterogeneous layer on the seed area. The isolation region comprises a seed area including a first semiconductor material. The heterogeneous layer comprises a second semiconductor material that has a lattice constant different from that of the first semiconductor material.