OTP device with read module and biasing circuitry to detect and measure accurate breakdown states of anti-fuse memory cells
An anti-fuse memory: an inverting input terminal of an operational amplifier is connected to a feedback terminal of a bias voltage generation module. A voltage across a second input terminal may be obtained according to a voltage across the feedback terminal. The second input terminal is electricall...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An anti-fuse memory: an inverting input terminal of an operational amplifier is connected to a feedback terminal of a bias voltage generation module. A voltage across a second input terminal may be obtained according to a voltage across the feedback terminal. The second input terminal is electrically connected to an output terminal of the operational amplifier. The voltage across the second input terminal serves as a bias voltage across a read module. A circuit between a second power supply terminal and the feedback terminal is equivalent to a circuit between a monitoring terminal and a first power supply terminal, and a circuit between the feedback terminal and an adjustable resistor is equivalent to a circuit between the monitoring terminal and an anti-fuse memory cell. |
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