Mask plate, method for fabricating the same, and mask plate assembly

The present application provides mask plate, fabrication method thereof, and mask plate assembly. The mask plate includes two opening areas being respectively on different sides of mask pattern area along first direction, and two welding areas. One welding area is on a side of one opening area away...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Zheng, Yong, Du, Shuai, Dai, Junxiu, Ding, Wenbiao, Gao, Chunyan
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present application provides mask plate, fabrication method thereof, and mask plate assembly. The mask plate includes two opening areas being respectively on different sides of mask pattern area along first direction, and two welding areas. One welding area is on a side of one opening area away from the mask pattern area along first direction, and the other welding area is on a side of the other opening area away from mask pattern area along first direction. Evaporation holes are arranged in mask unit, buffer holes are arranged in each opening area, and ratio of maximum dimension of buffer hole in any direction in plane where the mask plate is located to maximum dimension of evaporation hole in the direction is greater than 100. Buffer holes are distributed at equal intervals along a second direction, and second direction is in the plane and is perpendicular to first direction.