Selective carbon deposition

A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tan, Samantha SiamHwa, Van Schravendijk, Bart J, Gupta, Awnish, Lavoie, Adrien
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A method for depositing carbon on a substrate in a processing chamber includes arranging the substrate on a substrate support in the processing chamber. The substrate includes a carbon film having a first thickness formed on at least one underlying layer of the substrate. The method further includes performing a first etching step to etch the substrate to form features on the substrate, remove portions of the carbon film, and decrease the first thickness of the carbon film, selectively depositing carbon onto remaining portions of the carbon film, and performing at least one second etching step to etch the substrate to complete the forming of the features on the substrate.