SiC substrate and SiC ingot

SiC substrate and SiC ingot

In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ito, Masato, Suo, Hiromasa
Format: Patent
Sprache:eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Beschreibung
Zusammenfassung:In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm−1 or less.