Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same

A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain...

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Bibliographische Detailangaben
Hauptverfasser: Baeck, JuHeyuck, Lee, Dohyung, Jeong, ChanYong
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.