Method and system for wafer-level testing

The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations. A wafer having an IC formed thereon is provided. The IC is energized by raising the voltage of the IC to a first voltage level during a first period. A stress signal...

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Bibliographische Detailangaben
Hauptverfasser: Kuo, Yung-Liang, Lin, Wei-Hsun, He, Jun, Lin, Yu-Ting, Lu, Yinlung
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations. A wafer having an IC formed thereon is provided. The IC is energized by raising the voltage of the IC to a first voltage level during a first period. A stress signal is applied to the IC. The stress signal includes a plurality of sequences during a second period subsequent to the first period. Each of the sequence has a ramp-up stage and a ramp-down stage. The stress signal causes the voltage of the IC to fluctuate between a second voltage level and a third voltage level. Whether the IC complies with a test criterion is determined after applying the stress signal.