Floating gate semiconductor nanostructure-based biosensor and method for manufacturing same

In a floating gate semiconductor nanostructure biosensor and a method for manufacturing the biosensor, the nanostructure biosensor includes a substrate, an insulating layer, a nanostructure, a source electrode and a drain electrode, a floating gate and a biological sensing material. The insulating l...

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Bibliographische Detailangaben
Hauptverfasser:	Yoo, Sung-Keun, Seo, Seung-Wan, Kim, Jeong-A, Moon, Dong-Jun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	In a floating gate semiconductor nanostructure biosensor and a method for manufacturing the biosensor, the nanostructure biosensor includes a substrate, an insulating layer, a nanostructure, a source electrode and a drain electrode, a floating gate and a biological sensing material. The insulating layer is formed on the substrate. The nanostructure is protruded from the insulating layer. The source electrode and the drain electrode are formed on the insulating layer and dispose the nanostructure therebetween. The floating gate has a metal pattern or a polysilicon pattern, and extends with contacting the nanostructure. The biological sensing material has a first end combined with an immobile molecule on the floating gate, and a second end combined with a bio molecule.