Semiconductor device and method of manufacturing the same

In one embodiment, a method of manufacturing a semiconductor device includes forming a first layer including a metal element on a substrate, and processing the first layer by dry etching. The method further includes removing a second layer formed on a lateral face of the first layer by wet etching, after processing the first layer, and forming a first film on the lateral face of the first layer by processing the lateral face of the first layer with a liquid, after removing the second layer. Furthermore, the substrate is not exposed to ambient air, after removing the second layer and before forming the first film.