Comb / fishbone metal stack

An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/dr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Williams, Thomas Hua-Min, Kansagra, Keyurkumar Karsanbhai, Chen, Luis, Kusbit, Matthew Chauncey, Heggond, Smeeta
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/drain terminal A. Each interconnect stack of the first plurality of interconnect stacks extends in a second direction over at least a portion of the first set of MOS transistors and includes consecutive metal layer interconnects. Further, the IC includes a first comb interconnect structure extending in a first direction orthogonal to the second direction, with comb fingers extending in the second direction over at least a portion of the first set of MOS transistors and the first plurality of interconnect stacks. The first comb interconnect structure is coupled to the first plurality of interconnect stacks.