Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same

Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same

A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 perce...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schroeder, Thomas, Frank-Rotsch, Christiane, Boschker, Jos, Zorn, Martin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.