Dielectric thin film, capacitor element, and electronic circuit board

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B-O-N oxynitride. When the A-B-O-N oxynitride is represented by the compositional formula AaBbOoNn, (o...

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Bibliographische Detailangaben
Hauptverfasser:	Yamazaki, Junichi, Sato, Wakiko, Yamazaki, Kumiko
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY NON-METALLIC ELEMENTS PRINTED CIRCUITS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B-O-N oxynitride. When the A-B-O-N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a