Semiconductor device and method of manufacture
The present disclosure relates to a bipolar transistor semiconductor device including: a substrate layer, a collector epitaxial layer supported by the substrate layer, a base region supported by a portion of the collector epitaxial layer, and an emitter region supported by a portion of the base regi...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates to a bipolar transistor semiconductor device including: a substrate layer, a collector epitaxial layer supported by the substrate layer, a base region supported by a portion of the collector epitaxial layer, and an emitter region supported by a portion of the base region. The emitter region includes a polysilicon material. |
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