Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor la...

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Bibliographische Detailangaben
Hauptverfasser: Park, Pankwi, Shin, Ilgyou, Kim, Jinbum, Kim, Unki, Lim, Sungkeun, Jo, Yuyeong, Kim, Yihwan, Lee, Seunghun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.