Three-dimensional memory

Three-dimensional memories are provided. A three-dimensional memory includes a memory cell array, a first interconnect structure, a bit line decoder and a second interconnect structure. The bit line decoder is formed under the memory cell array and the first interconnect structure. The memory cell a...

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Bibliographische Detailangaben
Hauptverfasser:	Liu, Yi-Ching, Wang, Chenchen Jacob, Lu, Chun-Chieh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	Three-dimensional memories are provided. A three-dimensional memory includes a memory cell array, a first interconnect structure, a bit line decoder and a second interconnect structure. The bit line decoder is formed under the memory cell array and the first interconnect structure. The memory cell array includes a plurality of memory cells formed in a plurality of levels stacked in a first direction. The first interconnect structure includes at least one bit line extending in a second direction that is perpendicular to the first direction. The bit line includes a plurality of sub-bit lines stacked in the first direction. Each of the sub-bit lines is coupled to the memory cells that are arranged in a line in the corresponding level of the memory cell array. The second interconnect structure is configured to connect the bit line to the bit line decoder passing through the first interconnect structure.