Photoelectric conversion device having a semiconductor substrate with first, second and third photoelectric conversion portions
A photoelectric conversion device in the present disclosure includes a first trench extending inside a semiconductor substrate from a first face of the semiconductor substrate between a first photoelectric conversion portion and a second photoelectric conversion portion arranged in a first pixel and...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A photoelectric conversion device in the present disclosure includes a first trench extending inside a semiconductor substrate from a first face of the semiconductor substrate between a first photoelectric conversion portion and a second photoelectric conversion portion arranged in a first pixel and a second trench extending from a second face of the semiconductor substrate between the first pixel and a second pixel, and the end on the second face side of the first isolation portion is located closer to the second face side than the end on the first face side of the second isolation portion. |
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