Pre-decoder circuity

The disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the array and comprising a first and second n-type transistor having a first and second gate, respectively, a...

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Bibliographische Detailangaben
Hauptverfasser: Cui, Mingdong, Son, Jin Seung
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the array and comprising a first and second n-type transistor having a first and second gate, respectively, and pre-decoder circuitry to provide a bias condition for the first and second gate to provide a selection signal to one of the cells. The bias condition comprises a positive voltage for the first gate and a negative voltage for the second gate for a positive memory cell configuration, and zero volts for the first gate and the negative voltage for the second gate for a negative memory cell configuration. The pre-decoder circuitry comprises first pre-decoder circuitry to provide the positive voltage for the first gate and the zero volts for the second gate and second pre-decoder circuitry to provide the negative voltage for the second gate.