Backside metal formation methods and systems

Implementations of methods of forming a metal layer on a semiconductor wafer may include: placing a semiconductor wafer into an evaporator dome and adding a material to a crucible located a predetermined distance from the semiconductor wafer. The semiconductor wafer may include an average thickness...

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Bibliographische Detailangaben
1. Verfasser:	Seddon, Michael J
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Implementations of methods of forming a metal layer on a semiconductor wafer may include: placing a semiconductor wafer into an evaporator dome and adding a material to a crucible located a predetermined distance from the semiconductor wafer. The semiconductor wafer may include an average thickness of less than 39 microns. The method may also include heating the material in the crucible to a vapor and depositing the material on a second side of the semiconductor wafer.