Light emitting device using a gallium nitride (GaN) based material
A light emitting device according to an embodiment of the present disclosure includes: a first layer including Alx2Inx1Ga(1-x1-x2) N (0
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A light emitting device according to an embodiment of the present disclosure includes: a first layer including Alx2Inx1Ga(1-x1-x2) N (0 |
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