Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material. |
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