Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

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Bibliographische Detailangaben
1. Verfasser: Ghyselen, Bruno
Format: Patent
Sprache:eng
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Zusammenfassung:A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.