Method and apparatus for treating substrate
The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Kwon, Ohyeol Lee, Jung Hwan Park, Soo Young Ahn, Jun Keon |
description | The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11972939B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11972939B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11972939B23</originalsourceid><addsrcrecordid>eNrjZND2TS3JyE9RSMwD4oKCxKLEktJihbT8IoWSotTEksy8dIXi0qTiEqB4Kg8Da1piTnEqL5TmZlB0cw1x9tBNLciPTy0uSExOzUstiQ8NNjS0NDeyNLZ0MjImRg0AeFcp3w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for treating substrate</title><source>esp@cenet</source><creator>Kwon, Ohyeol ; Lee, Jung Hwan ; Park, Soo Young ; Ahn, Jun Keon</creator><creatorcontrib>Kwon, Ohyeol ; Lee, Jung Hwan ; Park, Soo Young ; Ahn, Jun Keon</creatorcontrib><description>The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240430&DB=EPODOC&CC=US&NR=11972939B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240430&DB=EPODOC&CC=US&NR=11972939B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kwon, Ohyeol</creatorcontrib><creatorcontrib>Lee, Jung Hwan</creatorcontrib><creatorcontrib>Park, Soo Young</creatorcontrib><creatorcontrib>Ahn, Jun Keon</creatorcontrib><title>Method and apparatus for treating substrate</title><description>The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2TS3JyE9RSMwD4oKCxKLEktJihbT8IoWSotTEksy8dIXi0qTiEqB4Kg8Da1piTnEqL5TmZlB0cw1x9tBNLciPTy0uSExOzUstiQ8NNjS0NDeyNLZ0MjImRg0AeFcp3w</recordid><startdate>20240430</startdate><enddate>20240430</enddate><creator>Kwon, Ohyeol</creator><creator>Lee, Jung Hwan</creator><creator>Park, Soo Young</creator><creator>Ahn, Jun Keon</creator><scope>EVB</scope></search><sort><creationdate>20240430</creationdate><title>Method and apparatus for treating substrate</title><author>Kwon, Ohyeol ; Lee, Jung Hwan ; Park, Soo Young ; Ahn, Jun Keon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11972939B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>Kwon, Ohyeol</creatorcontrib><creatorcontrib>Lee, Jung Hwan</creatorcontrib><creatorcontrib>Park, Soo Young</creatorcontrib><creatorcontrib>Ahn, Jun Keon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kwon, Ohyeol</au><au>Lee, Jung Hwan</au><au>Park, Soo Young</au><au>Ahn, Jun Keon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for treating substrate</title><date>2024-04-30</date><risdate>2024</risdate><abstract>The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11972939B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
title | Method and apparatus for treating substrate |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T22%3A23%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kwon,%20Ohyeol&rft.date=2024-04-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11972939B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |