Wafer forming method

A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be form...

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Bibliographische Detailangaben
1. Verfasser: Nomaru, Keiji
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer.