Modularized power amplifier devices and architectures

A packaged semiconductor chip includes a semiconductor sub strate having formed thereon: radio-frequency (RF) input and output contact pads, DC contact pads, and first and second amplifier stages. An input of the first amplifier stage is coupled with the RF input contact pad. An input and an output...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Drake, Brandon C, Chen, Qiang R, English, Gary P, Darapu, Ramanamurthy V, Lyons, Michael R, Mathews, Douglas J, Sun, Shih Peng, Berkheimer, Mark S, Buer, Kenneth V
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A packaged semiconductor chip includes a semiconductor sub strate having formed thereon: radio-frequency (RF) input and output contact pads, DC contact pads, and first and second amplifier stages. An input of the first amplifier stage is coupled with the RF input contact pad. An input and an output of the second amplifier stage are respectively coupled to an output of the first amplifier stage and the RF output contact pad. The DC contact pads and the input of the first amplifier stages are connected via an input bias coupling path. The outputs of the amplifier stages are connected via an output bias coupling path. The chip further includes a lead frame having RF input and output pins electrically coupled to the RF input and output contact pads, and input bias pins electrically coupled to the DC contact pad.