Multilayer structure, capacitor structure and electronic device

A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the se...

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Bibliographische Detailangaben
Hauptverfasser: Trinh, Hai-Dang, Wei, Yi Yang, Jiang, Fa-Shen, Lee, Bi-Shen, Kuang, Hsun-Chung
Format: Patent
Sprache:eng
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Zusammenfassung:A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.