Methods and apparatus for controlling RF parameters at multiple frequencies

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to...

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Bibliographische Detailangaben
Hauptverfasser: Srivastava, Shailendra, Rocha, Juan Carlos, Dzilno, Dmitry A, Jorapur, Nikhil Sudhindrarao, Mukuti, Ndanka O, Ye, Zheng John, Benjamin Raj, Daemian Raj
Format: Patent
Sprache:eng
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Zusammenfassung:A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.