Method and device for short-circuit detection by saturation detection in power semiconductor switches

The present invention relates to a method for short-circuit detection by saturation detection in power semiconductor switches and to a corresponding device. A reference voltage (Uref) is provided as a function of a supply voltage (UVDD) of a power semiconductor switch. A differential voltage (Udiff) is generated from the difference of a voltage drop (UΔ) of a load path of the power semiconductor switch and the provided reference voltage (Uref). The generated differential voltage (Udiff) is compared with a predetermined threshold voltage (Ulim). A short-circuit current in the load path of the power semiconductor switch is detected when the differential voltage (Udiff) exceeds the threshold voltage (Ulim). In this case, the power semiconductor switch is opened.