Selectively biasing magnetoresistive random-access memory cells

Selectively biasing magnetoresistive random-access memory cells

Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mehta, Virat Vasav, Rizzolo, Michael, Zare, Saba, Evarts, Eric Raymond
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.