Power module for the operation of an electric vehicle drive with improved temperature determination of the power semiconductor

Method for measuring an operating temperature of a power module (10) that is used for operating an electric vehicle drive, the power module (10) comprising a plurality of semiconductor switching elements (14) and drive electronics (16), wherein the semiconductor switching elements (14) can be switch...

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Bibliographische Detailangaben
Hauptverfasser:	Hain, Stefan, Meiler, Michael, Hager, Johannes
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC EQUIPMENT OR PROPULSION OF ELECTRICALLY-PROPELLEDVEHICLES ELECTRICITY ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES, IN GENERAL GENERATION MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PERFORMING OPERATIONS PHYSICS TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR TRANSPORTING VEHICLES IN GENERAL
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Beschreibung
Zusammenfassung:	Method for measuring an operating temperature of a power module (10) that is used for operating an electric vehicle drive, the power module (10) comprising a plurality of semiconductor switching elements (14) and drive electronics (16), wherein the semiconductor switching elements (14) can be switched by the drive electronics (16) in such a way that the semiconductor switching elements (14) allow or interrupt a drain-source current in order to convert the direct current fed into the power module (10) at the input side into an output-side alternating current, wherein the method comprises measurement of a voltage present at a point located on a side of a diode (22) that is connected in series with the semiconductor switching element (14) and that faces away from the semiconductor switching element (14), wherein the method comprises measurement of a drain-source current of the semiconductor switching element (14) that is generated by a current source (18), wherein the method comprises determination of a mathematical dependency between the measured voltage and the measured current.