Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers

A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2.

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Bibliographische Detailangaben
Hauptverfasser:	Zhu, Zhongwei, Yoon, Hyungsuk Alexander
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a hafnium nitride (HfN) layer on the HfO2 layer; and annealing the HfO2 layer and the HfN layer to form ferroelectric hafnium HfO2.