Silicon photonic interposer with two metal redistribution layers

A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first c...

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Bibliographische Detailangaben
Hauptverfasser: Raghunathan, Vivek, Sawyer, Brett, Luo, Ying, Lee, Michael, Drake, John Paul
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.