Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two o...

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Bibliographische Detailangaben
Hauptverfasser:	Berger, Paul, Zhang, Weidong, Brown, Elliott R, Growden, Tyler
Format:	Patent
Sprache:	eng
Schlagworte:	ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES DEVICES USING STIMULATED EMISSION ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MEASURING NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS PICTORIAL COMMUNICATION, e.g. TELEVISION RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.