Bipolar transistor
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base regi...
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base region and comprising semiconductor material and a hardmask surrounding a lower portion of the semiconductor material. |
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