Sacrificial dielectric for lithographic via formation to enable via scaling in high density interconnect packaging

Sacrificial dielectric for lithographic via formation to enable via scaling in high density interconnect packaging

An apparatus, comprising a substrate comprising a dielectric, a conductor, comprising a via embedded within the dielectric, the via has a first end and a second end, and substantially vertical sidewalls between the first end and the second end, and a conductive structure extending laterally from the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tanaka, Hiroki, Darmawikarta, Kristof, May, Robert A, Boyapati, Sri Ranga Sai
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An apparatus, comprising a substrate comprising a dielectric, a conductor, comprising a via embedded within the dielectric, the via has a first end and a second end, and substantially vertical sidewalls between the first end and the second end, and a conductive structure extending laterally from the first end of the via over the dielectric, wherein the via and the conductive structure have a contiguous microstructure.