Memory devices, semiconductor devices, and methods of operating a memory device

The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is conne...

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Bibliographische Detailangaben
Hauptverfasser: Wu, Shao-Ting, Chou, Shao-Yu, Chang, Meng-Sheng, Yang, Tzu-Hsien, Chang, Keh-Jeng, Tsai, Jui-Che, Wang, Yih, Lin, Yu-Wei, Lin, Ku-Feng, Yamauchi, Yoshitaka, Yuh, Perng-Fei, Yang, Chansyun David, Fan, Philex Ming-Yan
Format: Patent
Sprache:eng
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Zusammenfassung:The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.