Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip

Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip

Provided is a vertical field-effect transistor (VFET) device which includes: a substrate; a plurality of single-fin VFETs including respective 1st fin structures on the substrate; and a plurality of multi-fin VFETs each of which includes a plurality of 2nd fin structures on the substrate, wherein a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Seo, Kang Ill, Yim, Jeonghyuk
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a vertical field-effect transistor (VFET) device which includes: a substrate; a plurality of single-fin VFETs including respective 1st fin structures on the substrate; and a plurality of multi-fin VFETs each of which includes a plurality of 2nd fin structures on the substrate, wherein a fin pitch of the 2nd fin structures is smaller than a fin pitch of the 1st fin structures.