Semiconductor memory device and fabrication method thereof

Semiconductor memory device and fabrication method thereof

A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chen, Yung-Shen, Lin, Cheng-Yi, Lin, Chia-Hung, Weng, Tang-Chun, Hsu, Chia-Chang
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.