Spiking neural network hardware based on magnetic-tunnel-junction layer stacks

Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic...

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Bibliographische Detailangaben
Hauptverfasser: Lim, Jia Hao, Tan, Joel, Naik, Vinayak Bharat, Yamane, Kazutaka
Format: Patent
Sprache:eng
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Zusammenfassung:Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer. The antiferromagnetic layer has a static magnetic field with a magnetization, and the antiferromagnetic layer is antiferromagnetically coupled to the free layer.