Semiconductor die including stress-resistant bonding structures and methods of forming the same

A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion....

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Hauptverfasser: Cheng, Ming-Da, Hsueh, Chang-Jung, Lin, Wei-Hung, Chiang, Wan-Yu, Huang, Hui-Min, Zhan, Kai Jun
Format: Patent
Sprache:eng
Schlagworte:
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Zusammenfassung:A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.