Method and system of reducing charged particle beam write time

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information including the dosages for the plurality of pixels in the area. An increase in dosage for at least one pixel in a plurality of pixels in the sub area is determined, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.