Semiconductor structure with gate metal layer

A semiconductor structure includes a substrate, a gate structure on the substrate, and a source structure and a drain structure on opposite sides of the gate structure. The gate structure includes a gate electrode on the substrate and a gate metal layer on the gate electrode. The gate metal layer ha...

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Bibliographische Detailangaben
Hauptverfasser: Lin, Shin-Cheng, Chou, Cheng-Wei
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure includes a substrate, a gate structure on the substrate, and a source structure and a drain structure on opposite sides of the gate structure. The gate structure includes a gate electrode on the substrate and a gate metal layer on the gate electrode. The gate metal layer has at least one notch, which exposes the gate electrode below. The electric potential of the source structure is different from that of the gate structure.