Methods and apparatus for warpage correction

Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric...

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Bibliographische Detailangaben
Hauptverfasser: Thirunavukarasu, Sriskantharajah, Tan, Puay Han, Parathithasan, Karrthik, Tan, Chin Wei, Teo, Wei Jie Dickson, Su, Jun-Liang, Lim, Fang Jie
Format: Patent
Sprache:eng
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Zusammenfassung:Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.