Inverted integrated circuit and method of forming the same

An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active regions extend in a first direction, are in a substrate, and are located on a first level. The first active region includes a first drain/source reg...

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Bibliographische Detailangaben
Hauptverfasser:	Chang, Yu-Jung, Chiang, Ting-Wei, Zhuang, Hui-Zhong, Wang, Pochun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active regions extend in a first direction, are in a substrate, and are located on a first level. The first active region includes a first drain/source region and a second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact extends in a second direction, overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact extends in at least the second direction, overlaps the first insulating region and the first contact. The second contact is electrically insulated from the first drain/source region, is electrically coupled to the third drain/source region, and is located on a third level.