Image sensor and photodetector with transistor diode-connected via a resistance element

Image sensor and photodetector with transistor diode-connected via a resistance element

An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected...

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1. Verfasser: Moue, Takashi
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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creator Moue, Takashi
description An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit, a current mirror unit that includes a first resistance element connected to the differential input unit and an NMOS transistor diode-connected via the first resistance element, a second resistance element connected to the differential input unit, and a switch unit provided between the first input unit and a junction between the first resistance element and the NMOS transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.
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subjects BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
title Image sensor and photodetector with transistor diode-connected via a resistance element
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