Image sensor and photodetector with transistor diode-connected via a resistance element

An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected...

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Bibliographische Detailangaben
1. Verfasser:	Moue, Takashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit, a current mirror unit that includes a first resistance element connected to the differential input unit and an NMOS transistor diode-connected via the first resistance element, a second resistance element connected to the differential input unit, and a switch unit provided between the first input unit and a junction between the first resistance element and the NMOS transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.