Overlay mark design for electron beam overlay

Overlay mark design for electron beam overlay

The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yohanan, Raviv, Naot, Ira, Hajaj, Eitan, Gutman, Nadav, Eyring, Stefan, Steely-Tarshish, Inna, Feler, Yoel, Ghinovker, Mark, Pohlmann, Ulrich, Steely, Chris
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.