Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the f...

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Bibliographische Detailangaben

Hauptverfasser:	Park, Sangwuk, Song, Woo Bin, Lee, Ho, Kim, Junsoo, Min, Jaehong, Cho, Minhee, Lee, Sang Woo, Kim, Hei Seung, Kim, Chankyung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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