Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the f...

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Bibliographische Detailangaben
Hauptverfasser: Park, Sangwuk, Song, Woo Bin, Lee, Ho, Kim, Junsoo, Min, Jaehong, Cho, Minhee, Lee, Sang Woo, Kim, Hei Seung, Kim, Chankyung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.