Vertical shear weld wafer bonding

In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bondin...

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Bibliographische Detailangaben
Hauptverfasser:	Ehmke, John Charles, Kmecko, Ivan
Format:	Patent
Sprache:	eng
Schlagworte:	MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING
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Beschreibung
Zusammenfassung:	In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.