Memory device and method for forming the same

A memory device includes a substrate, a first transistor and a second transistor, a Schottky diode, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate, wherein a first source/drain structure of the first transistor is electric...

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Bibliographische Detailangaben
Hauptverfasser:	Su, Hsin-Wen, Huang, Chia-En, Hung, Lien-Jung, Wang, Ping-Wei, Lin, Shih-Hao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	A memory device includes a substrate, a first transistor and a second transistor, a Schottky diode, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate, wherein a first source/drain structure of the first transistor is electrically connected to a first source/drain structure of the second transistor. The Schottky diode is electrically connected to a gate structure of the first transistor. The first word line is electrically connected to the gate structure of the first transistor through the Schottky diode. The second word line is electrically connected to a gate structure of the second transistor. The bit line is electrically connected to a second source/drain structure of the second transistor.