ONON sidewall structure for memory device and methods of making the same

ONON sidewall structure for memory device and methods of making the same

A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate struc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chang, Yu-Chun, Yang, Yu-Hsiang, Hsu, Yu-Ling, Shih, Hung-Ling, Huang, Chen-Ming, Chang, Wei-Lin, Liu, Po-Wei, Yang, ShihKuang, Chen, Shih-Hsien, Lin, Chia-Sheng, Huang, Wen-Tuo
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.